Faculty/Research

Research Groups

밀리미터파 소자 및 회로 연구실

Millimeterwave Devices & Circuits

Prof. : Prof. Seo, Kwang Seok

Research Area : 반도체소자 및 집적회로



  • About the Laboratory & Research Area
  • Research Interests & Projects
  • Journals & Patents
  • [1] Dong-Hwan Kim, Myung-Jin Kang, Su-Keun Eom, Ho-Young Cha, and Kwang-Seok Seo "Low Current Collapse AlGaN/GaN HEMT-on-Si Substrate with SiNx / HfO2 Dual Passivation Layer", International Conference on Solid State Devices and Materials(SSDM), Sapporo, Japan, September 27-30, 2015
    [2] Su-Keun Eom, Ra-Seong Ki, Dong-Hwan Kim, Ho-Young Cha, and Kwang-Seok Seo "Improved interface of HfO2/InGaAs MOS by employing thin SiNx interfacial layer using plasma enhanced atomic layer deposition", International Conference on Solid State Devices and Materials(SSDM), Sapporo, Japan, September 27-30, 2015
    [3] Neung-Hee Lee, Minseong Lee, Woojin Choi, Donghwan Kim, Namcheol Jeon, Seonhong Choi, and Kwang-Seok Seo, "Effects of various surface treatments on gate leakage, subthreshold slope, and current collapse in AlGaN/GaN high-electron-mobility transistors", Japanese Journal of Applied Physics, VOL. 53, NO. 4S, March 2014
    [4] Woojin Choi, Ogyun Seok, Hojin Ryu, Ho-Young Cha, and Kwang-Seok Seo, "High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2", IEEE ELECTRON DEVICE LETTERS, VOL. 35, NO. 2, February 2014
    [5] Woojin Choi, Hojin Ryu, Namcheol Jeon, Ho-Young Cha, and Kwang-Seok Seo, "Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer", IEEE ELECTRON DEVICE LETTERS / Vol. 35, No. 1, January 2014
    [6] Jun-Chul Park, Jong-Gwan Yook, Bong Hyuk Park, Namcheol Jeon, Kwang-Seok Seo, Dongsu Kim, Woo-Sung Lee, and Chan-Sei Yoo "Hybrid Current-Mode Class-S Power Amplifier With GaN Schottky Diode Using Chip-On-Board Technique for 955 MHz LTE Signal", IEEE Transaction on Microwave Theory and Techniques / Vol. 61, No. 12, December 2013
    [7] J.-G. Lee, S. Choi, B.-R. Park, K.-S. Seo, H. Kim, and H.-Y. Cha, "Nonvolatile Memory Devices Based on SiO2/GaN/AlGaN/GaN structures", Electronic Letters / Vol. 49, No. 8, pp. 529-531, 2013
    [8] Jinhyun Noh, Yeonmi Ryoo, Namcheol Jeon, Ho-Young Cha, and Kwang-Seok Seo "Structural effects on heat dissipation in InGaAs MHEMTs", Semiconductor Science and Technology / Vol. 28, No. 4, 045012, March 2013
    [9] Bong-Ryeol Park, Jae-Gil Lee, Woojin Choi, Hyungtak Kim, Kwang-Seok Seo, and Ho-Young Cha "High-Quality ICPCVD SiO2 for Normally Off AlGaN/GaN-on-Si Recessed MOSHFETs", IEEE ELECTRON DEVICE LETTERS / Vol. 34, No. 3, March 2013
    [10] Jae-Gil Lee, Bong-Ryeol Park, Chun-Hyung Cho, Kwang-Seok Seo, and Ho-Young Cha "Low Turn-On Voltage AlGaN/GaN-on-Si Rectifier With Gated Ohmic Anode", IEEE ELECTRON DEVICE LETTERS / Vol. 34, No. 2, February 2013

TOP