Research Groups

반도체 재료 및 소자연구실

Semiconductor Materials & Devices Lab.

Prof. : Prof. Park, Byung-Gook / Prof. Jong-Ho Lee (S)

Research Area : Semiconductor Devices & Integrated Circuits

  • http://smdl.snu.ac.kr/
  • Tel.
  • Department of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul, 151-742, Republic of Korea

  • About the Laboratory & Research Area
  • In nanoscale device group in Semiconductor Materials and Devices Laboratory (SMDL), we have made our efforts focusing on the design and the fabrication of Non-Volatile Memories (NVM), tunneling devices, Light Emitting Diode (LED), biosensor and neuromorphic system. For the realization of high density NVM, various types of 3-dimensional stacked SONOS flash memories and Resistive Random Access Memory (RRAM) have been proposed and fabricated. And, researches about Tunneling Field-Effect Transistors (TFETs) for fast on-off switching and low power consumption device have been carried out. Moreover, characterization and reliability analysis of LED have been also performed. And Silicon Nanowire Field Effect Transistors (SiNW FET) to detect pH level have been fabricated and studied. Also, for the realization of neuromorphic system, some studies about synaptic device are ongoing.
  • Research Interests & Projects
  • On going projects
    - 3-D stacked NAND flash structure
    - Resistive Random Access Memory (RRAM)
    - Tunneling Field Effect Transistor (TFET)
    - GaN-based Light-Emitting Diode (GaN-based LED)
    - Biosensor for pH level detection
    - Neuromorphic system
  • Journals & Patents
  • 1. Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Seongjae Cho, and Byung-Gook Park, "Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications," Applied Physics Letters, Vol. 106, No. 21, pp. 212106-1-212106-4, May. 2015 [SCI]
    2. Jang Hyun Kim, Sang Wan Kim, Hyun Woo Kim, and Byung-Gook Park, "Vertical type double gate tunnelling FETs with thin tunnel barrier," Electronics Letters, Vol. 51, No. 9, pp. 718-720, Apr. 2015 [SCI]
    3. Myoung-Sun Lee, Ju-Wan Lee, Chang-Hee Kim, Byung-Gook Park, and Jong-Ho Lee, "Implementation of short-term plasticity and long-term potentiation in a synapse using Si-based type of charge-trap memory," IEEE Transactions on Electron Devices, Vol. 62, No. 2, pp. 569-573, Feb. 2015 [SCI]
    4. Jang Hyun Kim, Garam Kim, Euyhwan Park, Dong Hoon Kang, and Byung-Gook Park, "Effects of current spreading in GaN-based lightemitting," Journal of Semiconductor Technology and Science, Vol. 15, No. 01, pp. 114-121, Feb. 2015 [SCIE]
    5. Rajeev Ranjan, Min-Woo Kwon, Jungjin Park, Hyungjin Kim, and Byung-Gook Park, "Neuron circuit using a thyristor and inter-neuron connection with synaptic devices," Journal of Semiconductor Technology and Science, Vol. 15, No. 3, pp. 365-373, Jun. 2015 [SCIE]
    6. Byung-Gook Park, James S. Harris, Jr., Seongjae Cho, “Germanium Electroluminescence Device and Fabrication Method of the Same,”

    · United States Patent filed 13/776,879, February 26, 2013

    · United States Patent No. 8847204 B2, September 30, 2014

    · Korean Patent filed 10-2013-0034277, March 29, 2013

    · Korean Patent No. 10-1437926, August 29, 2014