[세미나] Recent Developments in Deep Submicron Devices Simulation and Experiments

2003-09-23l Hit 16598

국가지정연구실 물리전자연구실(NRL)

▣ 일시 : 2003년 9월 24일 (수) 11:00 ~ 12:00
▣ 장소 : 서울대학교 301동 821호 세미나실
▣ 연사 : Prof. Marcel D. PROFIRESCU(Technical Univ. of Bucharest)

o. Title : Compact MOSFET Model for ESD Applications

o. Abstract
- Introduction                                
- The roadmap for semiconductors
- Present-day technology:018-0.1micron          
- Oxide downscaling and breakdown
- Substrate currents                          
- Supeconducting metal rings as Quantum Bits
- Future devices:Quantum simulations        
- Experiments
- Conculsions

o.  Biography
1. Education
1959-1964: University Politehnica of Bucharest (UPB), Faculty of Electronics and Telecommunications (FET), Honours MSc Degree in Electronics, 1964.
1970-1973: University College London (UCL), Department of Electronic and Electrical Engineering (DEEE). PhD in Electronic Engineering and Computer Science, 1973 .

2. Positions Held
1964-1975: Assistant Professor, 1976-1990: Associate Professor, since 1991 Full Professor at UPB/FET.
1974-1975: Research Fellow at UCL/DEEE.

3. Research Experience
1976 - present: Head of Computer Experiments of Microelectronic Processes, Devices and Integrated Systems Laboratory-EDIL. Director of EDIL Microelectronics R&D Center since 1997. Founded EDIL in 1976 in order to continue the research undertaken in UK and to establish the base for this field in Romania. Along the years numerous students, researchers and academics  worked in EDIL, which through a continuos and sustained activity, led to the establishment of the Romanian school of computer simulation of semiconductor devices, known in the international scientific community. The research activity undertaken in EDIL through R&D projects comprised physical and numerical problems encountered in large signal time domain simulations and in the transient processes taking place in semiconductor devices. Uni and bipolar devices have been studied in two and three dimensions using finite difference, finite element and microscopic (Monte Carlo) methods in silicon and compound semiconductors. The high frequency and/or high power devices have been of prime interest. Marcel Profirescu led the EDIL team which developed the 2D BIMOSS simulator released in drift-diffusion version in 1985, in the hydrodynamic version in 1992, and 3D in 1994. Along its activity EDIL maintained close relationships with similar laboratories in Europe, the United States and Japan. In the TEMPUS European project JEP/JEN 2777/1991-1996 EDIL participated as coordinator and contractor with partners from UK, F, B, NL, I, IRL, CH and USA. Marcel Profirescu has been Director of more than 50 international/national projects/contracts. Since 1994 EDIL started activity in TCAD (Technology Computer Aided Design) within two international projects with IMEC/Leuven/B. Between 1997-2001 EDIL was engaged in an international project on CMOS in SiGe and III - V semiconductors with DEIS/Bologna/I, IMEC, IEMN/Lille/F and Columbia University/NYC. EDIL facilities and research level equal those from similar laboratories in Europe, the United States and Japan. Marcel Profirescu has extensive experience in the initiation, contracting and management of R&D national and international projects. Since 1992 together with IBM/Global Education and Training Centre/La Hulpe/B, EDIL implemented a Distance Learning and Multimedia Network in Information Technology and Microelectronics. Marcel Profirescu is director of EDIT Microelectronics and ICT  e–Learning  Centre established in 1997. EDIT is an e-Learning/Training provider.

문의 : 이명숙 물리전자연구실(TEL: 02-880-1797  /